Abstract
The first experimental study of hydrogenated amorphous silicon (a-Si:H) ultrathin films (df <500 Å) deposited on glass substrates using infrared spectroscopic phase-modulated ellipsometry is presented. The high sensitivity of this new technique is emphasized. In particular, SiH and SiH2 stretching bonds are identified on 50-Å-thick samples. It is shown that the structure of a-Si:H in the early stage of the growth (df <100 Å) may differ considerably from that of bulk materials: Hydrogen–silicon bonds are not observed in the first few seconds of the growth and the imaginary part of the dielectric function of the film is found to increase with df. These behaviors are attributed to an interaction of the growing film with the substrate.
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