Abstract
The Scher-Montroll model of transport in amorphous semiconductors is treated in the presence of very low energy excitations of infrared divergent nature. The discrepancy between temperature dependence of transit time given by time-of-flight experiments and other methods can be resolved in this way. It is shown that infrared divergent scattering without a wide distribution of transition rates results in a temperature dependence which is different from the experimentally observed one.
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