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Abstract
The development of growth process of multilayer semiconductor structures enables investigation of a new class of infrared detectors – detectors on quantum structures. The current trends of infrared receivers’ development are caused by active material research for a variety of nanostructures. The current state of development of infrared quantum structure detectors using ternary semiconductor alloys is considered. The maximal detectivity values of traditional detectors and quantum structure detectors are presented. The analysis of parameters for different types of materials and structures is performed.
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Schedule a callMore From: Bulletin of Kyiv Polytechnic Institute. Series Instrument Making
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