Abstract
Hf O 2 growth on H-terminated Si surfaces by atomic layer deposition (ALD) is studied with in situ Fourier transform infrared spectroscopy and ex situ Rutherford backscattering, using tetrakis-(ethyl-methyl-amino) hafnium and ozone as the hafnium and oxygen precursors, and compared to water-vapor-based ALD growth. The reaction pathways are different for the two oxygen precursors, leading to a lower growth rate for ozone (∼0.05nm∕cycle) than for water-based growth and to incorporation of different impurities in the HfO2 film. Furthermore, interfacial SiO2 is readily formed with ozone at the growth temperature (∼100°C), in contrast to water-based HfO2 growth.
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