Abstract

In this study Yb-doped Y<sub>2</sub>SiO<sub>5</sub> single crystals and thin films crystal field excitations and Raman active phonons characteristics have been compared using infrared absorption and Raman spectroscopy. The thin films high quality has been confirmed and their ability to adjust by co-doping various properties such as the Yb<sup>3+</sup> sites occupations and Yb<sup>3+</sup>-Yb<sup>3+</sup> pair interactions have been evidenced.

Full Text

Published Version

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.