Abstract
Using CH4 and CF4 precursor gases, amorphous fluorinated hydrocarbon (a-C:F:H) films were prepared with the method of microwave electronic cyclotron resonant (ECR) plasma chemical vapor deposition. Deposition rate of the film firstly increases and then decreases with variable flow ratios R {[CF4]/([CF4]+[CH4]} due to the competition between deposition and etching process. Results from Fourier-transform infrared transmission spectroscopy of these films show that C-F bond configuration in a-C:F:H films evolves with the variable gas flow ratios R. The locations of the C-F peaks in IR spectra shift to higher frequency with the increase of R, and finally the structure in films with R>75% takes on a PTFE-like structure, which mainly consists of -CF2- chain. The change of optical band gap Eg deduced by a Tauc plot with R is also discussed.
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