Infrared analysis of film growth on the silicon surface in room air

Abstract

Two infrared internal reflection spectroscopic techniques are used to analyze the composition of the film that grows on hydrophobic silicon at room temperature. A conventional internal reflection technique with a silicon internal reflectance element shows that the silicon surface adsorbs hydrocarbons from the atmosphere. A modified internal reflection technique showed <0.2 nm of SiO and SiO1.5 on the silicon surface one month after a hydrofluoric acid strip. Compared to the rate of contamination, the rate of silicon oxidation at room temperature is considered negligible.