Abstract
AlInAsSb photodetectors with high detectivity at 2 m and 2.7 m are reported. For 2-m photodetection, figure-of-merit characteristics including specific detectivity, D*, responsivity, dark current density, and differential-resistance area product of two photodetectors employing respectively Al<sub>0.15</sub>InAsSb and Al0.3InAsSb absorbers are compared and analyzed from 90 to 300 K. Peak D* of 1.110<sup>12</sup> Jones for 2-m photodetection was obtained at 0.1 V bias and 180 K and 4.910<sup>9</sup> Jones for 2.7-m photodetection at room temperature was obtained at 0.25 V bias. Close agreement was observed between dark current density and D* for different mesa diameters, an important consideration for focal plane arrays. The measured bias for peak D*, Vpeak, and the derived absorption coefficient and minority carrier diffusion length at different temperatures, provide improved understanding of the AlxInAsSb material for nBn photodetectors.
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