Abstract
Abstract Natural (types Ia and IIa) and synthetic (type Ib) diamonds have been irradiated with energetic electrons and neutrons and then heated at temperatures up to 1400°C. Attendant changes in the infrared absorption spectra, especially above the Raman frequency (1332 cm−1), have been monitored. The most prominent absorption to develop in the infrared region proper, on annealing both type Ia and type Ib specimens, whether electron- or neutron-irradiated, is the H1a line at 1450 cm−1. Measurements taken of neutron-irradiated type Ia specimens show that the strength of this line is specimen-dependent, and that it is a linear function of radiation dose. Isochronal annealing studies show that the onset of the line occurs during heating at 250°C for type Ia specimens and at 650°C for type Ib specimens. The absorption begins to weaken during heating at 1100°C, but it is very persistent, surviving an anneal of 4 hours at 1400°C, albeit with diminished intensity. Three other weaker lines at 1438, 1358 and 1355 cm−1 develop with the 1450 cm−1 line, but differ from it and from each other in subsequent annealing behaviour. Type Ib synthetic diamonds also show the development, at 650°C, of a second system of four apparently related lines at 1502,1430,1408 and 1384 cm−1, of which the one at 1502 cm−1 is the strongest. This system disappears during heating at 850°C. It is shown that the centre responsible for the 1502 cm−1 line involves one nitrogen atom only, and that the line is interpretable as a C-N bond vibration. Several other weaker peaks, notably at 1531, 1570 and 1573 cm−1, have been observed in the infrared spectra as a result of irradiation and annealing. Their dependences on diamond type, on the nature of the irradiation and on annealing conditions are described. Finally, a new line, termed H1c, has been found in the near-infrared region at ∼1936nm, accompanying the already-reported H1b line at ∼2026nm, which develops on annealing irradiated type Ia specimens. The onset of these lines occurs on heating at 650–700°C, and they anneal out completely during 4 hours at 1400°C. The strengths, widths and precise positions of the lines, which are thought to be of electronic rather than vibrational origin, are specimen-dependent. Their relationships to intrinsic nitrogenous defects are discussed: H1b depends on the presence of A aggregates whilst H1c almost certainly depends on B aggregates for its formation.
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