Abstract
We have calculated the infrared absorption at the local mode frequency for various isolated impurities such as B, Al, Mg, Si, C, and P in GaAs. To calculate the local mode frequency we take into account the effects from impurity mass defect and local force constant shifts and use the symmetry properties of the lattice. To calculate the absorption we consider contributions to the dipole moment from impurity and nearest neighbour charges and from charge migration effects. We suggest a physical model which accounts for impurity and nearest neighbour charges and polarizabilities.
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