Abstract
New compouning techniques were devised to prepare high-purity Ge 28Sb 12Se 60 (TI 1173)and Ge 33As 12Se 55 TI 20). The methods were based on the combination of the reactant purification and compounding steps. The goal of the program was to establish the absorption limit for the glasses and to lower the absorption at 10.6 μm. At the present purity level, the GeSbSe glass is found to have an absorption level of about 0.01 cm −1 at 10.6 μm while the absorption level for the GeAsSe glass is 0.05 cm −1. Underlying causes for the limits are discussed along with the possibilities for improvement.
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