Abstract
The infrared optical absorption of nitrogen–oxygen complex in Czochralski (CZ) silicon measured by a Fourier Transmission Infrared Spectroscope (FTIR) has been studied. The CZ silicon samples grown in N–O complex were annealed in the temperature range of 450–1150°C for 10, 20 and 30 min. It was found that the variation of the optical lines measured in the middle infrared range and that in the far infrared range had the same tendency during annealing. The relations of the absorption lines in the middle and far infrared range were built. It is considered that the absorption lines in both infrared ranges come from same defects in silicon.
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