Abstract
We have observed and assigned the main IR absorption bands of Si x C 1− x H z and Ge x C 1− x H z films produced with an r.f. glow discharge. The influence of neighbouring atoms on the frequency of SiH and CH bond stretching vibrations was determined. Agreement between observed and calculated frequency shifts was obtained for Si x C 1− x H z films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have