Abstract
Infrared absorption spectra of several n-type Mg 2Si and Mg 2Ge single crystals were obtained in the wavelength regions from 1–13 μ and 1–7 μ, respectively, over the temperature range from 85–370°K. Free carrier absorption occurred in Mg 2Si at the longer wavelengths. The absorption edges appeared to be due to indirect transitions and the shift of the optical energy gap with temperature is estimated to be −5 × 10 −4 eV (°K) −1 for Mg 2Si and −6.5 × 10 −4 eV (°K) −1 for Mg 2Ge. No values for the gaps were determined from the present data but they can be seen to be approximately equal to the gaps determined by electrical measurements. An absorption peak at 0.40 eV in n-type Mg 2Si was observed and is discussed.
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