Infrared absorption bands of a plasma-nitrided film on germanium(111)

Abstract

Anodic nitridation of a germanium wafer was carried out successfully in a plasma of ammonia:nitrogen excited by a high-frequency (500 kHz) electromagnetic field. The transmittances of the plasma-nitrided (PN) films on Ge(111) were measured by a Nicolet 170 SX Fourier transform infrared spectrometer and an IR-450S type infrared spectrophotometer. The infrared absorption bands of the beta -phase PN film on Ge are at 910 cm-1 (w) and 780 cm-1 (s) in the range of 4000-400 cm-1. The absorption bands of the two-phase ( alpha + beta ) growing PN film are at 910, 780 and 730 cm-1.