Abstract
To reveal the causes of infrared absorption in the wavelength region between electronic and lattice absorptions, we measured the temperature dependence of the absorption coefficient of p-type low-resistivity (sim 10^2~ Omega mathrm{cm}) CdZnTe crystals. We measured the absorption coefficients of CdZnTe crystals in four wavelength bands (lambda =6.45, 10.6, 11.6, 15.1~mu m) over the temperature range of T=8.6-300 K with an originally developed system. The CdZnTe absorption coefficient was measured to be alpha =0.3-0.5 mathrm{cm}^{-1} at T=300 K and alpha =0.4-0.9 mathrm{cm}^{-1} at T=8.6 K in the investigated wavelength range. With an absorption model based on transitions of free holes and holes trapped at an acceptor level, we conclude that the absorption due to free holes at T=150-300 K and that due to trapped-holes at T<50 K are dominant absorption causes in CdZnTe. We also discuss a method to predict the CdZnTe absorption coefficient at cryogenic temperature based on the room-temperature resistivity.
Highlights
Cadmium zinc telluride (CdZnTe) is a type II-VI compound semiconductor, commonly used as an X-ray detector1 or substrate for the growth of epitaxial layers of mercury cadmium telluride (MCT) for infrared detector arrays.2 Large-size single-crystal CdZnTe growth techniques have been developed for such applications
We anticipate that CdZnTe can be used as an infrared optical material by controlling its extrinsic properties
We investigate the process for mid-infrared photon absorption by measuring the temperature dependence of the absorption coefficient of CdZnTe in the temperature
Summary
Cadmium zinc telluride (CdZnTe) is a type II-VI compound semiconductor, commonly used as an X-ray detector or substrate for the growth of epitaxial layers of mercury cadmium telluride (MCT) for infrared detector arrays. Large-size single-crystal CdZnTe growth techniques have been developed for such applications. Cadmium zinc telluride (CdZnTe) is a type II-VI compound semiconductor, commonly used as an X-ray detector or substrate for the growth of epitaxial layers of mercury cadmium telluride (MCT) for infrared detector arrays.. Large-size single-crystal CdZnTe growth techniques have been developed for such applications. Single-crystal ingots of CdZnTe with 5-inch diameter are commercially available, with 6-inch crystals in the experimental stage.. CdZnTe is promising as an infrared optical material with wavelengths between 5-20 m. CdZnTe has little intrinsic absorption in the infrared wavelength range. CdZnTe has extrinsic absorption, such as free-carrier absorption due to impurities and attenuation due to Te precipitates.. We anticipate that CdZnTe can be used as an infrared optical material by controlling its extrinsic properties (e.g., impurity or Te precipitates) CdZnTe has extrinsic absorption, such as free-carrier absorption due to impurities and attenuation due to Te precipitates. As a result, we anticipate that CdZnTe can be used as an infrared optical material by controlling its extrinsic properties (e.g., impurity or Te precipitates)
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