Abstract
Infrared reflection measurements at near normal incidence between 400–7800 cm−1 have been performed on ion implanted bulk and epitaxial 4H-SiC. Three samples were triple implanted with N14 at 30, 80, and 140 keV to achieve a flat dopant profile. A fourth sample was implanted at 20, 40 and 60 keV at a temperature of ∼830 K in-order to reduce lattice damage. We make use of the Reststrahlen band, situated between the Transverse Optical (TO) ωTO and the Longitudinal Optical (LO) ωLO phonon modes to investigate both the damage created by ion-implantation and the lattice recovery induced by subsequent XeCl excimer laser (308 nm) annealing. We show that an optimum incident laser fluence between 0.9 and 1.0 J/cm2 exists for lattice recovery.
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