Abstract
A monolithic combination of an AlGaAs laser and an AlGaInP laser is demonstrated. The two lasers are grown in a stack, in a single metal organic vapour phase epitaxial growth. The two devices can be addressed individually, and exhibit good characteristics: for the AlGaAS laser, the pulsed threshold current density and efficiency are 240A/cm2 and 26%/facet, while the respective values for the red AlGaInP laser are 260A/cm2 and 21%/facet.
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