Information entropy and population inversion of a three-level semiconductor quantum dot

Abstract

In this paper, an analytical solution for a three-level semiconductor quantum dot has been presented. From this solution, we have discussed the effects of the phenomenological damping parameters, the electromagnetic field amplitude $$E_{0}$$ of the excitation pulse $$E(\omega )$$ , and the detuning parameters on the atomic occupation probabilities, the atomic population inversion, the purity, and the information entropy $$H(\sigma _\mathrm{{z}}). $$ A long-lived quantum coherence obviously has emerged in all figures. Besides, a decay has appeared in all curves of the atomic occupation probability $$\rho _{gg}(t),$$ the atomic population inversion, and the purity. Since there are not sufficient mathematical solutions for such systems, our study may add further insight into many dynamic systems, and this in turn should open up a wide range of applications for semiconductor quantum dot.