Abstract
Complex ions substitution is gaining more attention as an appealing method of modifying the structure and performance of microwave ceramics. In this work, Li<sub>2</sub>Zn[Ti<sub>1-<em>x</em></sub>(Ni<sub>1/3</sub>Nb<sub>2/3</sub>)<em><sub>x</sub></em>]<sub>3</sub>O<sub>8</sub> (LZTNN<em>x</em>, 0 ≤ <em>x</em> ≤ 0.3) ceramics were designed based on complex ions substitution strategy, following the substitution rule of radius and valence to investigate the relationships between phase composition (containing oxygen vacancies and Ti<sup>3+</sup> ions), microstructure, and microwave dielectric characteristics of LZTNN<em>x</em> ceramics. The samples maintained a single Li<sub>2</sub>ZnTi<sub>3</sub>O<sub>8</sub> solid solution phase as <em>x</em> ≤ 0.2 whereas the <em>x</em> = 0.3 sample produced a secondary phase with LiNbO<sub>3</sub> structure. The appropriate amount of (Ni<sub>1/3</sub>Nb<sub>2/3</sub>)<sup>4+</sup> substitution could slightly improve the densification of LZTNN<em>x</em> ceramics due to the formation of Li<sub>2</sub>ZnTi<sub>3</sub>O<sub>8</sub> solid solution accompanied by a decrease in average grain size. The presence of a new <em>A</em><sub>1g</sub> Raman active band at about 848 cm<sup>-1</sup> indicated that the local symmetry changed, affecting the atomic interactions of LZTNN<em>x</em> ceramics. The variation in dielectric constant (ε<em><sub>r</sub></em>) was closely related to molar volume ionic polarizability, and the temperature coefficient of resonant frequency (τ<em><sub>f</sub></em>) was related to the bond valence of Ti. The increase in density, the absences of Ti<sup>3+</sup> ions and oxygen vacancies, and the reduction in damping behavior were responsible for decreased dielectric loss. The LZTNN0.2 ceramic sintered at 1120 <sup>o</sup>C exhibited favorable microwave dielectric properties: ε<em><sub>r</sub></em> = 22.13, quality factor (<em>Q</em>×<em>f)</em> = 97350 GHz, and τ<em><sub>f</sub></em> = −18.6 ppm/<sup>o</sup>C, which might be a promising candidate for wireless communication applications in highly selective electronics.
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