Abstract

We developed a two-dimensional (2D) transport model to investigate mass transport during bulk AlN crystal growth via the physical vapor transport (PVT) process using the finite element method (FEM), taking the powder source porosity, buoyancy, and vapor diffusion into account. The porosity effects of the powder source on mass transport under various growth conditions were investigated in detail. The simulation results show that the porosity of the powder source significantly affects the mass transport process during AlN sublimation growth. When the porosity of the powder source decreases, the growth rate becomes more uniform along the seed deposition surface, although the sublimation rate and crystal growth rate decrease, which can be attributed to the reduced specific surface area of the powder source and the reduced flow rate of Al vapor in the powder source. A flat growth interface can be achieved at a porosity of 0.2 under our specific growth conditions, which in turn facilitate the growth of high-quality AlN crystals and better yield. The decomposition of the powder source and the transport of Al vapor in the growth chamber can be suppressed by increasing the pressure. In addition, the AlN growth rate variation along the deposition surface can be attributed to the Al vapor pressure gradient caused by the temperature difference in the growth chamber.

Highlights

  • AlN is a brilliant electronic material for high-temperature, high-frequency, and highpower electronic and optoelectronic devices due to its excellent properties, such as its ultrawide bandgap, high thermal conductivity, high resistivity, strong breakdown voltage, high electron mobility, and low dielectric coefficient [1,2,3]

  • A 2D incompressible flow and mass transport model was developed to investigate the process of mass transfer during bulk AlN crystal growth by the Physical vapor transport (PVT) growth process using the finite element method (FEM) method, taking the effects of powder source porosity, buoyancy, and vapor diffusion into account

  • The simulation results showed that the powder source porosity significantly affected the mass transfer of the AlN sublimation growth

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Summary

Introduction

AlN is a brilliant electronic material for high-temperature, high-frequency, and highpower electronic and optoelectronic devices due to its excellent properties, such as its ultrawide bandgap, high thermal conductivity, high resistivity, strong breakdown voltage, high electron mobility, and low dielectric coefficient [1,2,3]. Numerous modeling and experimental results during SiC growth using the PVT method have shown that the powder source porosity has a significant effect on the growth process [17,18]. We developed a two-dimensional (2D) transport model to investigate mass transport during bulk AlN crystal growth by the PVT process using the finite element method (FEM). In these models, the effects of the powder source porosity, buoyancy, and vapor diffusion are considered. The effects of pressure and temperature difference on the crystal growth process considering the porosity of the powder source are investigated in detail

Geometry Description and Numerical Modeling
Validation of the Model
Effect of Pressure
Effect of Temperature Difference
Conclusions
Full Text
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