Influences of Oxygen and Carbon on the Formation of the 1.014 eV Photoluminescence Copper Center in Silicon Crystal

Abstract

Influences of concentrations of oxygen and carbon in float zone and Czochralski (CZ)‐grown silicon crystals contaminated with Cu on the photoluminescence (PL) intensities of the 1.014 eV Cu center were measured. Formation of the Cu center was severely hindered by oxygen, but slightly enhanced by carbon. The PL intensities of the center were also influenced by boron and phosphorous for CZ crystals. These findings supported an already published structural model of the center in which the Cu atom was collinearly bonded with Si atoms at the center of the Si‐Si bond. © 2000 The Electrochemical Society. All rights reserved.