Influences of Microhole Depth and SiO2 Nanoparticle/Microsphere Passivation Layer on the Performance of GaN-Based Light-Emitting Diodes

Abstract

A hybrid structure, including 45° sidewalls, a microhole array, and a thin SiO2 nanoparticle (NP)/microsphere (MS) passivation layer, is used to produce GaN-based light-emitting diodes (LEDs). The influences of the microhole depth and SiO2 NP/MS passivation layer on the LED performance are studied. A shallower depth of a microhole array shows better optical properties due to the complete preservation of the GaN/InGaN multiple quantum well (MQW) region. In addition, the use of a thin SiO2 NP/MS passivation layer gives a remarkably reduced reverse-biased leakage current and improved optical performance. Experimentally, under an injection current density of 110 A/cm2, the studied device, with a proper hybrid structure, shows enhancements of 25.9%, 29.2%, and 29.4% in light output power (LOP), external quantum efficiency (EQE), and wall-plug efficiency, respectively, as compared to a LED device with a deeper depth of microhole array. These improvements are mainly caused by the reduced total internal reflection (TIR) and the Fresnel reflection, which increase scattering probability and the opportunity to find photon escape cones. Hence, the studied hybrid structure in this work is a promising route to fabricate high-performance GaN-based LEDs.