Abstract
Copper Indium Gallium Selenide (Cu(In,Ga)Se 2 , CIGSe) absorbers with different Ga contents were prepared by sputtering CIGSe ceramic targets and post-annealing. CIGSe solar cell devices were fabricated with other functional layers. The device performances and absorber properties were investigated. Increasing Ga content led to an increase in V OC and a decrease in J SC . Ga was supposed to diffuse towards back contact during the annealing process. The best performance was obtained as the ratio of Ga/(In + Ga) reaches 0.32 with the efficiency of 13.8% and a V OC of 537 mV.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
