INFLUENCES OF DEPOSITION TIME ON TIO2 THIN FILMS PROPERTIES PREPARED BY CVD TECHNIQUE

Abstract

Titanium dioxide (TiO2) is known as a material with exceptionally good optical, mechanical and thermal properties. An increasing interest has been devoted to the study of TiO2 because of their numerous applications in various industries. In this study, by controlling process parameters, TiO2 thin films were successfully deposited on a glass substrate using chemical vapor deposition (CVD) technique. It has been fabricated using two source materials that are 99.9 % pure titanium and graphite powder at 1000 °C annealing temperature. The deposition time were observed at 1 hour, 2 hours and 3 hours. The TiO2 thin films properties were characterized using X-Ray Diffraction (XRD), Atomic Force Microscope (AFM), Ultraviolet-Visible Spectroscopy (UV-Vis), Surface Profilometer (SP) and Current-Voltage (I-V) Measurement Tools. Based on XRD results, the intensity of mixed anatase, rutile, cotunnite type and TiO2 was highest for 3 hours deposition time. AFM images reveal the crystalline morphology with average grain size of 151.662 nm. The band gap energy obtained from UV-Vis as well as thicknesses gained from SP and resistivity acquired from Current-Voltage (I-V) Measurement of deposited TiO2 thin films were increasing with deposition time. It is vice versa for the conductivity of deposited TiO2 thin films that is declining with increasing of deposition time. It can be concluded from the experimental results that the deposition time affects the TiO2 thin films properties.