Abstract
A high rate high efficiency sputtering cathode which produces a relatively high bias current has been developed. This cathode was used to prepare Al-1%Si films with substrate bias voltages in the range 0–150 V d.c. The step coverage, microstructure, texture, sheet resistance and reflectivity of the films were examined, and the results were related to the bias conditions. Primarily it was shown that a substantial redistribution of material could be achieved with the new target configuration, while maintaining a practical bias voltage; excellent step coverage was obtained over a perpendicular step with a 1 μm wall separation.
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