Abstract
Thin films from methylene blue dye dopant with silicon oxide nanoparticles (semiconducting) with percentages (0, 0.01, 0.03 and 0.05%) with a thickness of 0.001 nm, had been prepared in this research. The effect of silicon oxide impurities in methylene blue dye on the optical properties (absorption, absorbance coefficient, transmittance, energy band-gap for the forbidden and permissible electronic transitions, refractive index, extinction coefficient, dielectric constant with its real and imaginary particles, and photoconductivity) was investigated by Spectrophotometer route in the visible range 400-800 nm. Show that studying of pure and dopants samples with previous ratios increasing of absorption coefficient with increasing the doped ratios, in addition the optical conductivity, as for the values of the band gap for forbidden and permissible transitions, they decreased with the increase by the dopants percentage.
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