Abstract
In this investigation, n-type (100) silicon wafers with a thickness of 600 ± 25 μm and resistance of 0.1-100 μΩ were used to manufacture porous silicon. With the aid of hydrofluoric acid (HF) with a 20% concentration, a current density of 20 mA/cm2, and various experimental drilling times of 5, 15, and 25 minutes with the fixation of other parameters, the photoelectrochemical etching method was successful. The morphology of porous silicon was investigated using scanning electron microscopy (SEM), the XRD- diffraction wide of porous silicon creation with rising apex peaks was confirmed, and (AFM) sponge-like morphology was seen, and the pore diameter grew larger as drilling time rose. In a drilling time of 15 minutes, it is able to quantify both the vibrational and electrical characteristics of the energy band gap using Raman analysis and PL detection. Investigate sample samples' current voltage readings (J-V) at various etching times. Additionally, we discovered devices with a broad wavelength that react to the response in the investigation of the spectrum response PS AL/PS/SI/Al as a photodetector.
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