Influence on Hole and Electron Mobilities of Using a Multi-Wall Structural Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Abstract

We investigated the influence on hole and electron mobilities of metal–oxide–semiconductors field-effect transistors with a multi-wall channel structure. Though electron mobilities are decreased, using a multi-wall channel structure enhances hole mobilities. We prepared samples with various wall-heights, widths and wall-pitches. The multi-wall channel structure produces a (110) surface channel and a strain produced by polycrystalline silicon gates. These enhance the hole mobility. The degree of hole mobility enhancement depends on the wall-height and wall-pitches. We also investigated the influence of bi-axial strain in the substrate on the multi-wall structure by using strained-Si substrate.