Abstract
In this study, we report the effect of Zr/Sn ratio on the Antiferroelectric (AFE) → Ferroelectric (FE) phase transition and transverse piezoelectric characteristics on AFE thin films of compositions having the general formula Pb0.97La0.02(Zr1-x+ySnxTiy)O3, where y = 0.10 and 0.10 ≤ x ≤ 0.15 along the phase boundary in the ternary system Pb(Zr0.50Ti0.50)O3-Pb(Zr0.50Sn0.50)O3-PbZrO3. Thin films having a thickness of 2.0 µm were fabricated on platinised silicon substrates by sol–gel method. Data obtained from dielectric, ferroelectric and structural studies have been combined to explain the mechanism of AFE → FE switching.
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