Influence of ZnSb2O6 Doping on Phase, Electrical and Dielectric Properties of ZnO Varistors

Abstract

AbstractThe present investigation reports the variations of the microstructure and electrical properties due to a change in the ZnSb2O6 content of ZnO varistors. The impact of the ZnSb2O6 additive on both microstructure and electrical properties in ZnO varistors is studied via the X‐ray diffraction (XRD) and an impedance analyzer. Zn7Sb2O12 spinel phase and single hexagonal ZnO phase are detected in ZnO varistors with the addition of ZnSb2O6. The ZnO varistors with 5 mol% ZnSb2O6 have the highest nonlinear coefficient (43.2) and the lowest leakage current density (3.96 A cm−2). The resistivity of grain boundary ρgb increases continuously with the increasing content of ZnSb2O6 as demonstrated by impedance measurements. Additionally, low values of dielectric loss at high frequencies suggest a ZnO varistor doped with ZnSb2O6 is suitable for high frequency device applications.