Influence of ZnO interlayer on the performance of inverted organic photovoltaic device

Abstract

Inverted organic photovoltaic devices with a structure of fluorine tin oxide (FTO)/ZnO/poly(3-hexylthiophene) (P3HT):[6,6]-phenyl C 61 butyric acid methyl ester (PCBM)/Ag were fabricated, in which ZnO interlayer serves as an electron selective layer. The ZnO interlayer includes three different nanostructures: polycrystalline seed layer, polycrystalline seed layer/loose nanopillars and polycrystalline seed layer/dense nanopillars. The influences of the different ZnO interlayers on the device performance were investigated. It is concluded that the polycrystalline seed layer/loose nanopillars offer more interfacial area with the P3HT:PCBM blends and acts as a continuous conducting path to the cathode. Our results demonstrate that effective infiltration of the blends into the ZnO nanopillars is critical for optimizing the device performance.