Abstract
The influence o f ytterbium atoms on the electrophysical properties o f silicon MIS- structures is investigated by means o f CC-DLTS and high-frequency volt- faradic characteristics. It is shown that the presence o f ytterbium atoms in the volume o f the silicon substrate leads to a decrease in the density o f surface states o f MIS - structures. It is found that the presence o f Yb atoms in the substrate does not lead to noticeable changes in the density distribution o f surface states o f Nss over the width o f the band gap Eg
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