Abstract
An investigation was made of the influence of γ irradiation on the temperature dependences of internal friction in disk-shaped silicon substrates in the kilohertz frequency range. After exposure to doses of 104 and 105 R, two dominant internal friction peaks were observed at ∼330 and ∼450 K with activation energies H 1=0.6 eV and H 2=0.9 eV, respectively. These peaks were evidently caused by reorientation of interstitial silicon atoms in dumbbell configurations.
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