Abstract
A theoretical analysis is made of self-generated current oscillations under DC bias in modulation-doped GaAs/AlxGa1-xAs multilayer structures. With applied fields parallel to the layers, real-space transfer of electrons into the AlxGa1-xAs barriers can lead to negative differential conductivity and oscillations, depending crucially upon the slope of the load line and upon lattice temperature. We find by numerical simulations that the oscillations are relatively robust against weak disorder introduced by fluctuations of the well and barrier widths, the doping concentration and the alloy fraction of the barrier.
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