Influence of uniaxial stress on quantum effects in Si inversion layers

Abstract

We show that the application of a compressional stress to the Si substrate decreases the mobility of electrons in the lowest subband and causes piezoresistance. This effect, together with the electron transfer effect and the existence of localized band-tail states in the subbands at low electron densities, account for the piezoresistance in n-channel (100)Si inversion layer at 4.2 K.