Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon

Abstract

The relaxation of electrons bound to bismuth donors in silicon and the effect of uniaxial stress have been studied using the time-resolved single color pump-probe technique. In unstressed Si:Bi, an excited 2p0 donor state is resonantly coupled with the donor 1s(A1) ground state via an intervalley f-TO optical phonon. This results in a very short lifetime (a few ps) of the excited state. Even a slight deformation of the silicon crystal leads to modification of particular interstate energies of the donor, which resolves the resonant coupling to intervalley phonons whose energies remain unchanged. We have shown that once the energy gap between the lower stress-split component of the 2p0 state and the ground state becomes less than the energy of the f-TO phonon, the relaxation of electrons from the excited state slows down to about 300 ps. The experimental data are compared with theoretical calculations of the 2p0 state relaxation rate, which are performed assuming that it is dominated by the emission of intervalley phonons.