Influence of Uniaxial Deformation along the [110] Direction on the Relaxation of Arsenic Shallow Donor States in Germanium

Abstract

The relaxation rates of arsenic donor states in germanium upon interaction with acoustic phonons are analyzed depending on uniaxial crystal compression deformation along [110] direction at low temperatures (<10 K). It is shown that the formation of the inverse population of donor levels, which depends on the crystal-deformation magnitude, occurs under optical excitation, which gives us grounds to assume the possibility of the effect of stimulated radiation in the THz frequency range at intracenter transitions of shallow arsenic donors under their optical excitation. It is shown that uniaxial deformation can lead to switching of the laser transition and, consequently, to a variation in the stimulated-radiation frequency.