Abstract
A rigorous 2D physical simulator is developed to determine the noise behavior of subhalf-micrometer gate-length FETs taking into account the non-stationary transport properties and the quantization effects. The microscopic nature of the simulator allows better understanding of the physical operation of these devices. As an example, the model is applied to compare and to accurately interpret the noise behavior of similar MESFET and Hetero-FET structures, to determine the physical phenomena which dominate their behavior, and to suggest different possibilities to improve the noise performance in a wide frequency range of operation.
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