Abstract
The D2+ fluence dependence on deuterium (D) retention was studied to clarify the D retention mechanism in tungsten. The additional D desorption stage was observed around 660K in the TDS spectrum for a sample implanted with D2+ up to the fluence of 1023D+m−2, which desorption stage was not observed the D2+ implanted sample with the fluence less than 1022D+m−2. The TEM observation showed that the highly dense voids were formed in tungsten by D2+ implantation with the fluence of 1023D+m−2, considering that the D would be trapped by voids. To understand the D trapping by voids in C+ implanted tungsten, C+–D2+ sequential implantation experiments at various C+ implantation temperatures were performed. It was found that the amount of D desorbed around 560K was increased by increasing the C+ implantation temperature. The formation of the voids was observed with increasing the C+ implantation temperature by TEM, indicating that the increase of D desorption around 560K was caused by the formation of voids. However, the desorption temperature of D trapped by voids in C+ implanted sample was lower than that in D2+ implanted one. TEM observation and XPS measurement indicated that this difference was caused by the increase of void size and/or the presence of implanted carbon.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
