Abstract

The recombination of positive ions and atoms during an afterglow period, created during previous electrical breakdown and gas discharge, at the molybdenum glass and copper is investigated using the time delay method. It has been shown that the recombination of the positive ions at the copper wall, while the atoms at the molybdenum wall, at room temperature, is more intensive. The temperature influence on the recombination of these particles at copper has also been monitored by the same method, showing that the positive ion recombination rate increases and atom recombination rate decreases with temperature.

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