Abstract
New systematic measurements of effective carrier trapping times were used as an input to simulate the operation of an irradiated silicon strip detector. The dependence of charge-collection efficiency (CCE) on bias voltage, magnetic field, irradiation particle type, fluence, and detector design was investigated. It was observed that irradiated detectors processed on standard n-silicon material with n/sup +/ strips performed better than those with p/sup +/ strips. At /spl Phi//sub eq/=2/spl times/10/sup 14/ cm/sup -2/, the difference in CCE was around 10% at voltages well above V/sub FD/ and even larger for lower voltages. A few percent difference in CCE for different track paths across the strip was observed. The effective Lorentz angle was found to be independent of the irradiation level. A nonnegligible amount of charge also appears on neighboring strips as a consequence of charge trapping. The influence of detector thickness and strip width on induced charge was also studied.
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