Abstract
Indium–tin–oxide (ITO) is a material having metallic behavior in the infra-red spectral range. Its electrical and optical properties are also easily tuned, making it a suitable alternative plasmonic material in the infra-red region. In this work, electrical and optical simulation modeling was performed to study the effect of trap densities in different carrier scattering mechanisms on the mobility in ITO. This study correlates the micro-structural and opto-electronic parameters to the surface plasmon resonance (SPR) behavior in the ITO thin films. The results indicate that low defect density with high carrier concentration can provide better SPR performance in ITO.
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