Abstract
The influence of transient enhanced boron out-diffusion from the intrinsic base, caused by excess silicon interstitials created during the extrinsic base implantation, has been investigated for a non-selective SiGe HBT process. Devices with different designs of the extrinsic base region were fabricated, where some designs allowed part of the epitaxial base to be implanted with a high boron dose, hereby increasing the number of silicon interstitials close to the intrinsic device. These devices showed a marked degradation of DC characteristics and HF performance. 2D-device simulations were used to investigate the sensitivity in DC and HF parameters to vertical base profile changes. Good agreement was obtained between measured and simulated DC and HF characteristics.
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