Abstract
CrAlN films have been prepared using a pulsed DC reactive sputtering system. The effects of N 2/Ar ratio and pulse width on the film's structure and properties have been investigated. The total sputtering pressure decreased with increased N 2/Ar ratio. All CrAlN films showed NaCl-type CrN structure, while mixed structures of wurtzite-type Cr 2N, wurtzite-type AlN and NaCl-type CrN phases formed in the films produced under lower sputtering pressure and higher pulse width. Increasing the sputtering pressure resulted in a decrease in the films internal stress. Moreover, the plastic hardness of the films prepared under different pulse widths was higher at the lower sputtering pressure.
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