Abstract
Diamond film has been deposited on substrate of cobalt cemented tungsten carbide (WC–Co). An exploration is carried out to reveal effect of Ti ion implantation and ion implantation energy on the diamond nucleation and growth on tungsten carbide. Diamond nucleation density is enhanced with Ti ion implantation and a dense nucleation belongs to a sample at 35 kV. A diamond film growing subsequently consists of oriented diamond crystals with columnar structure and such crystals uniformly distribute and grow well on tungsten carbide.
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