Abstract
In this study, the influence of oxidation state of adhesion layers on performance of Pt films was investigated. The results showed that both elemental films (Ti and Ta) and their non-stoichiometric oxides films (TiOx and TaOx) could significantly enhance the adhesion between Pt film and SiO2 substrate. In comparison to Ti and Ta films, non-stoichiometric TiOx and TaOx films used as adhesion layers could greatly inhibit diffusion between Pt film and underlayer at high temperature, resulting in lower film resistivity after annealing treatment. After annealing at 800 °C, 500 nm Pt film with resistivity value of 12.5 μΩ cm was obtained.
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