Abstract
ABSTRACTTin disulfide thin films were prepared with different molarities of tin species (MSn) at the optimized substrate temperature using the Nebulized Spray pyrolysis technique to obtain better crystallinity with mono phase thin films. The concentration of Tin IV chloride Penta hydrate precursor is varied from 0.05:0.4 to 0.25:0.4 (SnCl4.5H2O: thiourea) to achieve correct stoichiometry and to tune the concentration of Tin ions in the SnS2 thin films. These films were well adherent, uniform, and shiny. Lower concentrations of Tin yields highly textured SnS2 thin films with (001) crystallite orientation. On increasing the concentration, the multi-phases (SnS and Sn2S3) were found to be present along with SnS2 material. The platelet-like grains were observed from SEM analysis in these SnS2 films. Multiple interference effects were predominant in all these thin films in the wavelength region of 600–1100 nm. The direct optical band gap of tin disulfide thin films had decreased from 3.2 eV to 2.75 eV with an increase in MSn from 0.05 to 0.2 M, respectively, and further increased to 3.0 eV for 0.25 M concentration. Using Hall Effect measurement, the type of semiconductor is found to be of n-type. A minimum resistivity value of 2.19 × 103 Ω cm was obtained for the film grown at MSn = 0.2 M.
Highlights
Semiconductor thin films have fascinating application in the field of photovoltaic energy conversion [1,2,3]
Tin disulfide thin films were deposited onto amorphous glass substrates with different precursor concentrations of tin species by modified spray pyrolysis technique using the nebulizer
The color of the thin film prepared with 0.05 M concentration was pale golden yellow with less adhesion to the substrate
Summary
Semiconductor thin films have fascinating application in the field of photovoltaic energy conversion [1,2,3]. Thin film of tin disulfide is composed of sheets of tin atoms sandwiched between two close-packed sheets of sulfur atoms [4] and has many properties like high optical absorption co-efficient (>104 cm−1) in the visible region [5], n-type electrical conductivity [6,7], wide optical band gap [8], etc. These properties support the use of this material as a window layer in thin film solar cells [9]. As the substrate temperature was optimized earlier, these films of SnS2 were prepared at that substrate temperature by changing the concentration of both cation and anion precursor solutions, keeping the ratio of precursors of cation and anion species as 1:2 always
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