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Abstract
In this article, we report the influence of TiN gate on electron and hole channel mobility at low temperatures down to 13K. TiN gate is found to modify the Si/SiO2 surface roughness limited mobility term as compared to Poly-Si gate, leading to a modification of the high field effective mobility behaviour. Interface roughness is shown to be process dependent (CVD vs. MOCVD). An analytical model of surface roughness scattering is used to link our electrical results to morphological roughness parameters.
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