Abstract
The influence of Ti doping on the resistivity, activation energy of conductivity, energy band gap, Urbach energy, crystallization temperature, heat effect and crystallization kinetic parameters in Ge2Sb2Te5 thin films for phase change memory was investigated. It was shown that introduction of Ti influences on the thermal properties, and kinetics of crystallization process. Results of analyzes showed that Ti doping affects crystallization time, and probability of spontaneous crystallization at room temperature, which must be taken into consideration at designing PCM cells with Ti electrodes.
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